BS ISO 14701:2018,Surface chemical analysis — X-ray photoelectron spectroscopy — Measurement of silicon oxide thickness.
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BS ISO 14701:2018 is only applicable to flat, polished samples and for instruments that incorporate an Al or Mg X-ray source, a sample stage that permits defined photoelectron emission angles and a spectrometer with an input lens that can be restricted to less than a 6° cone semi-angle.
The measurement of the thickness of silicon oxide at the surface of silicon wafers has been conducted in the past by many methods. These generally apply to oxide layers thicker than 20nm. It is often important to measure thicknesses in the range below 10nm, and this document addresses the range below 8nm using X-ray photoelectron spectroscopy.
The procedures described in this document provide methods to measure the thickness with high accuracy (optimally 1 %) and also, more rapidly and simply, at lower accuracy (optimally 2 %).It could also form a basis for the measurement of many film thicknesses on substrates, but without considerable further work, the uncertainties will be undefined.
BS ISO 14701:2018 PDF comes from the Internet and can be downloaded free of charge.